Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Schottky diodeDescription: FAIRCHILD SEMICONDUCTOR FFSH30120ADN_F155 Diode, silicon carbide Schottky, dual common cathode, 1.2 kV, 30 A, 95 nC, TO-247 new12021+$107.724010+$103.0403100+$102.1972250+$101.5415500+$100.51111000+$100.04282500+$99.38715000+$98.8250 -
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Category: IGBTtransistorDescription: 600V ， 75AField Stop IGBT 600V, 75A Field Stop IGBT57641+$48.950110+$46.1415100+$44.0551250+$43.7341500+$43.41311000+$43.05202500+$42.73105000+$42.5304 -
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Category: Diode arrayDescription: 10A Up to 80A, Fairchild Semiconductor offers industry standard diodes and rectifiers, small signal diodes, Schottky and Zener diodes for both new design and procurement. The components provide the best combination of quality, functionality, and packaging options.99715+$22.640750+$21.6731200+$21.1313500+$20.99581000+$20.86042500+$20.70565000+$20.60887500+$20.5121 -
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Category: Classification of electronic componentsDescription: Rectifiers UFR TO247 30A 600V AUTO817010+$8.7396100+$8.3026500+$8.01131000+$7.99672000+$7.93855000+$7.86567500+$7.807410000+$7.7782 -
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Category: Diode arrayDescription: 30A ， 300VInvisible diode 30A, 300V Stealth diode38275+$13.601350+$13.0200200+$12.6945500+$12.61311000+$12.53182500+$12.43885000+$12.38067500+$12.3225 -
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Category: Power diodeDescription: 30A ， 1200V Stealth⑩Dual diode 30A, 1200V Stealth ⑩ Dual diode1327 -
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Category: IGBTtransistorDescription: Automobile, compliant with IGBT, Fairchild Semiconductor Fairchild Semiconductor series IGBT complies with AEC-Q101 requirements # # # standard AEC-Q101 # # IGBT discrete parts and modules, Fairchild Semiconductor insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.85355+$34.008450+$32.5550200+$31.7412500+$31.53771000+$31.33422500+$31.10175000+$30.95647500+$30.8110 -
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Category: MOSpipeDescription: 56A ， 100V ， 0.025 OhmN-channel UltraFET Power MOSFET 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs45795+$13.309950+$12.7411200+$12.4226500+$12.34301000+$12.26332500+$12.17235000+$12.11547500+$12.0586 -
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Category: MOSpipeDescription: 75A ， 55V ， 0.012 OhmN-Channel UltraFET Power MOSFETs 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs21105+$14.675350+$14.0482200+$13.6970500+$13.60921000+$13.52142500+$13.42105000+$13.35837500+$13.2956 -
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Category: MOSpipeDescription: 75A ， 55V ， 0.009 OhmN-Channel UltraFET Power MOSFETs 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs86365+$2.697325+$2.497550+$2.3576100+$2.2977500+$2.25772500+$2.20785000+$2.187810000+$2.1578 -
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Category: MOSpipeDescription: 49A ， 55V ， 0.024 OhmN-Channel UltraFET Power MOSFETs 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs622710+$9.4416100+$8.9695500+$8.65481000+$8.63912000+$8.57615000+$8.49747500+$8.434510000+$8.4030 -
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Category: MOSpipeDescription: 75A ， 55V ， 0.012 OhmN-Channel UltraFET Power MOSFETs 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs368110+$9.1008100+$8.6458500+$8.34241000+$8.32722000+$8.26665000+$8.19077500+$8.130010000+$8.0997 -
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Category: Diode arrayDescription: FAIRCHILD SEMICONDUCTOR RURG3060CC Fast/ultrafast power diode, dual common cathode, 600 V, 30 A, 1.5 V, 55 ns, 325 A10105+$15.341050+$14.6854200+$14.3183500+$14.22651000+$14.13472500+$14.02985000+$13.96437500+$13.8987 -
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Category: IGBTtransistorDescription: FAIRCHILD SEMICONDUCTOR HGTG30N60B3D.. Single transistor, IGBT, 60 A, 1.9 V, 208 W, 600 V, TO-247, 3 pins19211+$43.379510+$40.8906100+$39.0416250+$38.7571500+$38.47271000+$38.15272500+$37.86825000+$37.6904 -
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Category: MOSpipeDescription: Trans MOSFET N-CH 600V 37A 3Pin TO-247 Tube47901+$38.647210+$36.4297100+$34.7824250+$34.5290500+$34.27561000+$33.99052500+$33.73715000+$33.5787 -
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Category: MOSpipeDescription: SuperFET® And SuperFET ® II N-channel MOSFET, Fairchild Semiconductor uses super junction technology to add SuperFET ® II High Voltage Power MOSFET Series. It provides the best robust body diode performance, suitable for AC-DC switch mode power supply (SMPS) applications that require high power density, system efficiency, and reliability, such as servers, telecommunications, computing, industrial power supplies, etc UPS/ESS、 Solar inverters and lighting applications. By utilizing advanced charge balancing technology, designers can achieve more efficient and cost-effective high-performance solutions, occupying less board space and improving reliability.29331+$52.863810+$49.8307100+$47.5774250+$47.2308500+$46.88411000+$46.49422500+$46.14755000+$45.9309 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCH085N80_F155 Power Field Effect Transistor, MOSFET, N-channel, 46 A, 800 V, 0.067 ohm, 10 V, 4.5 V New96641+$104.231410+$99.6996100+$98.8839250+$98.2494500+$97.25241000+$96.79922500+$96.16485000+$95.6210 -
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Category: Classification of electronic componentsDescription: Trans IGBT Chip N-CH 700V 80A Tube88485+$26.747450+$25.6043200+$24.9642500+$24.80421000+$24.64422500+$24.46135000+$24.34707500+$24.2327 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 650V 150A 3Pin TO-247 Tube37671+$44.794710+$42.2246100+$40.3153250+$40.0215500+$39.72781000+$39.39732500+$39.10365000+$38.9200 -
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Category: IGBTtransistorDescription: Separated IGBT, Fairchild Semiconductor # # IGBT discrete components and modules, Fairchild Semiconductor insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.91475+$28.855750+$27.6226200+$26.9320500+$26.75941000+$26.58672500+$26.38945000+$26.26617500+$26.1428 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 120A 3Pin TO-247 Tube48371+$36.947710+$34.8278100+$33.2529250+$33.0107500+$32.76841000+$32.49582500+$32.25355000+$32.1021 -
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Category: Classification of electronic componentsDescription: Schottky diode and rectifier 1200V SiC SBD 15A23491+$61.637710+$58.9578100+$58.4754250+$58.1002500+$57.51071000+$57.24272500+$56.86755000+$56.5459 -
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Category: MOSpipeDescription: Trans MOSFET N-CH 75V 210A 3Pin(3+Tab) TO-247 Tube524110+$8.7504100+$8.3129500+$8.02121000+$8.00662000+$7.94835000+$7.87547500+$7.817010000+$7.7879 -
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Category: MOSpipeDescription: NChannel 55V 75A81735+$5.306925+$4.913850+$4.6386100+$4.5207500+$4.44202500+$4.34385000+$4.304410000+$4.2455 -
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Category: MOSpipeDescription: 15A ， 500V ， 0.38 OhmN-channel Switching Power MOSFET 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET9953 -
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Category: MOSpipeDescription: Trans MOSFET N-CH 600V 52A 3Pin TO-247 Rail95705+$32.438350+$31.0520200+$30.2757500+$30.08161000+$29.88762500+$29.66585000+$29.52717500+$29.3885 -
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Category: MOSpipeDescription: SuperFET® And SuperFET ® II N-channel MOSFET, Fairchild Semiconductor uses super junction technology to add SuperFET ® II High Voltage Power MOSFET Series. It provides the best robust body diode performance, suitable for AC-DC switch mode power supply (SMPS) applications that require high power density, system efficiency, and reliability, such as servers, telecommunications, computing, industrial power supplies, etc UPS/ESS、 Solar inverters and lighting applications. By utilizing advanced charge balancing technology, designers can achieve more efficient and cost-effective high-performance solutions, occupying less board space and improving reliability. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.18045+$33.837650+$32.3915200+$31.5817500+$31.37931000+$31.17682500+$30.94555000+$30.80097500+$30.6563
